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|1981-1984||Post-doctoral fellow in department of Physics, Queen’s University, Kingston Canada|
|1981||PhD (Physics) degree from Delhi University|
|1975||MSc Tech (Applied Physics) from Andhra University|
|1984-1988||Principal Scientist, Motorola, Albuquerque, USA|
|1988-1995||Professor of Engineering Science, The Pennsylvania State University, USA|
|2012||Fellow of the Indian National Academy of Engineering|
|2003||Member of the Asia Pacific Academy of Materials|
|2003||Fellow of the Indian Academy of Sciences, Bangalore|
|Fellow of the Indian National Science Academy|
|Vice President of the Materials Research Society of India|
|2010||C.N.R. Rao prize lecture for Advanced Materials|
|2009||J. C. Bose Fellow|
|2006||Rustum Choksi medal for research excellence|
|2006||Tatachem Chair Professorship, Indian Institute of Science|
|2004||MRS Superconductivity-Materials Science Award|
|1997||MRSI Medal, India|
|1986||2 Engineering Invention Awards at Motorola, USA|
Professor Krupanidhi’s research on multi-component ferroelectric oxides has focused on the oriented and epitaxial growth by pulsed laser ablation, sol-gel processing and magnetron sputtering. He was the first to couple the ECR plasma to physical vapor growth for low temperature epitaxy in complex oxides. Professor Krupanidhi was one of the first to integrate ferroelectric thin films on semiconductors to demonstrate ferroelectric field effect transistors which subsequently became the backbone of the development of ferroelectric random-access memories (FRAMs). Based upon his significant contributions, he also functioned as a consultant to NEC, and Matsushita in Japan and Samsung in South Korea. Currently he is focusing on the development of engineered ferroelectric nano structures for accomplishing high capacitance density for ultra-high-density memories. The critical zones in the phase diagram of the PZT compositions for enhanced pyroelectric response considering both compositional and strain fluctuations in the microscopic regions were identified for the first time. Most recently these results are further confirmed by polarization mapping via piezo force microscopy by his group.
His group was the first to design and formulate the multilayered relaxers with higher orders of strain via electrostriction. Most recently, his group discovered an unconventional phase transformation in the asymmetrically multilayered relaxers through interfacial strain coupling. This is considered most important result for high density charge pumping through field and strain induced phase switching. The mechanical stain acts as a mediator among the electric and magnetic domains and their micro structural interactions among the domains. This aspect has been exploited in the artificially structured superlattices of the multiferroic perovskites.
In the area of III-V compound semiconductors, Professor Krupanidhi developed space quality solar cells involving MOCVD growth of epitaxial GaAs on Ge substrates. Efficiencies of upto 19% were achieved and were authenticated by NASA. Besides the device development, his group pioneered the basic science of III-V epitaxy, p- and n- type GaAs growth using auto carbon doping, and banc gap narrowing phenomena in hetero epitaxy. In addition, his research work included successful development of solar cells based upon CIGS (CuInGaSe) and eliminating the toxic CdS layer.
Most recently Professor Krupanidhi’s research has been extended to the design and development of quantum well and quantum dot structures of epitaxial III-V compounds, specifically for longer wavelength Quantum Well structured Infrared Photodetectors (QWIPs). First set of results already established the successful development of IR detectors which are operating in the wavelength ranges of 3-5 and 8-10 micron. His group also pioneered droplet epitaxy of quantum dots of III-Nitrides using MBE process. These quantum dots are successfully employed in the band gap engineering and tuning of wavelength in high bright LEDs.
|1||Roul B, Pant R, Chowdhury AM, Chandan G, Singh DK, Chirakkara S, Nanda KK, Krupanidhi SB||Highly Responsive ZnO/AlN/Si Heterostructure-Based Infrared-and Visible-Blind Ultraviolet Photodetectors With High Rejection Ratio||IEEE Transactions on Electron Devices. 2019; 66(3):1345-52|
|2||Chowdhury AM, Chandan G, Pant R, Roul B, Singh DK, Nanda KK, Krupanidhi SB||Self-powered, broad band and ultrafast InGaN based photodetector||ACS Applied Materials & Interfaces. 2019|
|3||Mukhokosi EP, Roul B, Krupanidhi SB, Nanda KK||Toward a Fast and Highly Responsive SnSe2-Based Photodiode by Exploiting the Mobility of the Counter Semiconductor||ACS applied materials & interfaces. 2019; 11(6):6184-94|
|4||Mohan L, Roul B, Krupanidhi SB||Temperature dependent electrical properties of AlN/Si heterojunction||Journal of Applied Physics. 2018; 124(20):205111|
|5||Khan MA, Kumawat KL, Nanda KK, Krupanidhi SB||Reduced graphene oxide-based broad band photodetector and temperature sensor: effect of gas adsorption on optoelectrical properties||Journal of Nanoparticle Research. 2018; 20(11):293|
|6||Pant R, Shetty A, Chandan G, Roul B, Nanda KK, Krupanidhi SB||In-plane anisotropic photoconduction in nonpolar epitaxial a-plane GaN||ACS applied materials & interfaces. 2018; 10(19):16918-23|
|7||Rambabu A, Senthilkumar B, Dayamani A, Krupanidhi SB, Barpanda P.||Preferentially oriented SrLi2Ti6O14 thin film anode for Li-ion micro-batteries fabricated by pulsed laser deposition||Electrochimica Acta. 2018; 269:212-6|
|8||Kundu HK, Ray S, Dolui K, Bagwe V, Choudhury PR, Krupanidhi SB, Das T, Raychaudhuri P, Bid A||Quantum phase transition in few-layer NbSe2 probed through quantized conductance fluctuations||Physical review letters. 2017; 119(22):226802|
|9||Roul B, Pant R, Chirakkara S, Chandan G, Nanda KK, Krupanidhi SB||Enhanced UV photodetector response of ZnO/Si with AlN buffer layer||IEEE Transactions on Electron Devices. 2017; 64(10):4161-6|
|10||Pant R, Patel N, Nanda KK, Krupanidhi SB||Negative differential resistance and resistive switching in SnO2/ZnO interface||Journal of Applied Physics. 2017; 122(12):125303|