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1981-1984 Post-doctoral fellow in department of Physics, Queen’s University, Kingston Canada
1981 PhD (Physics) degree from Delhi University
1975 MSc Tech (Applied Physics) from Andhra University


1984-1988 Principal Scientist, Motorola, Albuquerque, USA
1988-1995 Professor of Engineering Science, The Pennsylvania State University, USA


2012 Fellow of the Indian National Academy of Engineering
2003 Member of the Asia Pacific Academy of Materials
2003 Fellow of the Indian Academy of Sciences, Bangalore
Fellow of the Indian National Science Academy
Vice President of the Materials Research Society of India


2010 C.N.R. Rao prize lecture for Advanced Materials
2009 J. C. Bose Fellow
2006 Rustum Choksi medal for research excellence
2006 Tatachem Chair Professorship, Indian Institute of Science
2004 VASVIK Medal
2004 MRS Superconductivity-Materials Science Award
1997 MRSI Medal, India
1986 2 Engineering Invention Awards at Motorola, USA

Professor Krupanidhi’s research on multi-component ferroelectric oxides has focused on the oriented and epitaxial growth by pulsed laser ablation, sol-gel processing and magnetron sputtering. He was the first to couple the ECR plasma to physical vapor growth for low temperature epitaxy in complex oxides. Professor Krupanidhi was one of the first to integrate ferroelectric thin films on semiconductors to demonstrate ferroelectric field effect transistors which subsequently became the backbone of the development of ferroelectric random-access memories (FRAMs). Based upon his significant contributions, he also functioned as a consultant to NEC, and Matsushita in Japan and Samsung in South Korea. Currently he is focusing on the development of engineered ferroelectric nano structures for accomplishing high capacitance density for ultra-high-density memories. The critical zones in the phase diagram of the PZT compositions for enhanced pyroelectric response considering both compositional and strain fluctuations in the microscopic regions were identified for the first time. Most recently these results are further confirmed by polarization mapping via piezo force microscopy by his group.

His group was the first to design and formulate the multilayered relaxers with higher orders of strain via electrostriction. Most recently, his group discovered an unconventional phase transformation in the asymmetrically multilayered relaxers through interfacial strain coupling. This is considered most important result for high density charge pumping through field and strain induced phase switching. The mechanical stain acts as a mediator among the electric and magnetic domains and their micro structural interactions among the domains. This aspect has been exploited in the artificially structured superlattices of the multiferroic perovskites. 

In the area of III-V compound semiconductors, Professor Krupanidhi developed space quality solar cells involving MOCVD growth of epitaxial GaAs on Ge substrates. Efficiencies of upto 19% were achieved and were authenticated by NASA. Besides the device development, his group pioneered the basic science of III-V epitaxy, p- and n- type GaAs growth using auto carbon doping, and banc gap narrowing phenomena in hetero epitaxy. In addition, his research work included successful development of solar cells based upon CIGS (CuInGaSe) and eliminating the toxic CdS layer. 

Most recently Professor Krupanidhi’s research has been extended to the design and development of quantum well and quantum dot structures of epitaxial III-V compounds, specifically for longer wavelength Quantum Well structured Infrared Photodetectors (QWIPs). First set of results already established the successful development of IR detectors which are operating in the wavelength ranges of 3-5 and 8-10 micron. His group also pioneered droplet epitaxy of quantum dots of III-Nitrides using MBE process. These quantum dots are successfully employed in the band gap engineering and tuning of wavelength in high bright LEDs.

Recent Publications:

1 Roul B, Pant R, Chowdhury AM, Chandan G, Singh DK, Chirakkara S, Nanda KK, Krupanidhi SB Highly Responsive ZnO/AlN/Si Heterostructure-Based Infrared-and Visible-Blind Ultraviolet Photodetectors With High Rejection Ratio IEEE Transactions on Electron Devices. 2019; 66(3):1345-52
2 Chowdhury AM, Chandan G, Pant R, Roul B, Singh DK, Nanda KK, Krupanidhi SB Self-powered, broad band and ultrafast InGaN based photodetector ACS Applied Materials & Interfaces. 2019
3 Mukhokosi EP, Roul B, Krupanidhi SB, Nanda KK Toward a Fast and Highly Responsive SnSe2-Based Photodiode by Exploiting the Mobility of the Counter Semiconductor ACS applied materials & interfaces. 2019; 11(6):6184-94
4 Mohan L, Roul B, Krupanidhi SB Temperature dependent electrical properties of AlN/Si heterojunction Journal of Applied Physics. 2018; 124(20):205111
5 Khan MA, Kumawat KL, Nanda KK, Krupanidhi SB Reduced graphene oxide-based broad band photodetector and temperature sensor: effect of gas adsorption on optoelectrical properties Journal of Nanoparticle Research. 2018; 20(11):293
6 Pant R, Shetty A, Chandan G, Roul B, Nanda KK, Krupanidhi SB In-plane anisotropic photoconduction in nonpolar epitaxial a-plane GaN ACS applied materials & interfaces. 2018; 10(19):16918-23
7 Rambabu A, Senthilkumar B, Dayamani A, Krupanidhi SB, Barpanda P. Preferentially oriented SrLi2Ti6O14 thin film anode for Li-ion micro-batteries fabricated by pulsed laser deposition Electrochimica Acta. 2018; 269:212-6
8 Kundu HK, Ray S, Dolui K, Bagwe V, Choudhury PR, Krupanidhi SB, Das T, Raychaudhuri P, Bid A Quantum phase transition in few-layer NbSe2 probed through quantized conductance fluctuations Physical review letters. 2017; 119(22):226802
9 Roul B, Pant R, Chirakkara S, Chandan G, Nanda KK, Krupanidhi SB Enhanced UV photodetector response of ZnO/Si with AlN buffer layer IEEE Transactions on Electron Devices. 2017; 64(10):4161-6
10 Pant R, Patel N, Nanda KK, Krupanidhi SB Negative differential resistance and resistive switching in SnO2/ZnO interface Journal of Applied Physics. 2017; 122(12):125303